Metallic spintronic devices edited by Xiaobin Wang.

Contributor(s):

Wang, Xiaobin [Editor]

Material type: Text

TextSeries: Devices, circuits, and systems ; 32Publication details: Boca Raton: CRC Press, 2015.Description: xv, 249 pages : illustrations ; 24 cmISBN:

9781138072329 (Pbk)

Subject(s):

DDC classification:

621.3 W184M 23

LOC classification:

TK7874.887 .M48 2015

Other classification:

TEC008010 | TEC008000 | SCI055000

Online resources:

Cover image

Summary: "Featuring contributions from well-known academic and industrial experts in the field, this book examines the latest research, development, and applications of metallic spintronic devices, from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Applying physics principles for practical implementations of spintronic devices, the text provides specific model, design, and processing procedures for current commercial and future devices. By addressing both mainstream and emerging metallic spintronic devices, the editor provides a balanced view of the state of the art"--

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Holdings
Item type	Current library	Collection	Call number	Status	Notes	Date due	Barcode
Books	Central Library, IISER Bhopal Reference Section	Reference	621.3 W184M (Browse shelf(Opens below))	Not For Loan	Reserve		9059

"A CRC title, part of the Taylor & Francis imprint, a member of the Taylor & Francis Group, the academic division of T&F Informa plc."

"Featuring contributions from well-known academic and industrial experts in the field, this book examines the latest research, development, and applications of metallic spintronic devices, from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Applying physics principles for practical implementations of spintronic devices, the text provides specific model, design, and processing procedures for current commercial and future devices. By addressing both mainstream and emerging metallic spintronic devices, the editor provides a balanced view of the state of the art"--

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